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| SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 OptiMOS(R) Buck converter series Feature * N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 3.9 80 P- TO220 -3-1 V m A * Enhancement mode * Logic Level * Excellent Gate Charge x RDS(on) P- TO262 -3-1 product (FOM) * Superior thermal resistance * 175C operating temperature * Avalanche rated * dv/dt rated Type SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 Package Ordering Code Marking 2N03L04 2N03L04 2N03L04 P- TO220 -3-1 Q67042-S4113 P- TO263 -3-2 Q67042-S4112 P- TO262 -3-1 Q67042-S4114 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25C Value 80 80 Unit A ID Pulsed drain current TC=25C I D puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 380 18 6 20 188 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=80 A , VDD=25V, RGS =25 Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A, VDS=24V, di/dt=200A/s, Tjmax=175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-01-20 SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.51 max. 0.8 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID = 130 A Zero gate voltage drain current V DS=30V, V GS=0V, Tj=25C V DS=30V, V GS=0V, Tj=125C A 0.01 10 1 1 100 100 nA m 5 4.6 3.6 3.2 6.5 6.2 4.2 3.9 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, ID=80A V GS=4.5V, ID=80A, SMD version Drain-source on-state resistance4) V GS=10V, ID=80A V GS=10V, ID=80A, SMD version 1Current limited by bondwire ; with an R thJC = 0.8K/W the chip is able to carry I D= 163A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-01-20 SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, I F=80A VR =15V, IF=lS, diF /dt=100A/s Symbol Conditions min. Values typ. 23 2930 1150 268 13 20 54 19 max. - Unit g fs Ciss Coss Crss t d(on) tr t d(off) tf V DS2*I D*RDS(on)max, ID=80A V GS=0V, V DS=25V, f=1MHz 11.5 - S 3900 pF 1520 402 19 30 81 28 ns V DD=15V, VGS=10V, ID=80A, RG=2.2 Q gs Q gd Qg V DD=24V, ID=40A - 9 27 79 3.2 12 41 105 - nC V DD=24V, ID=40A, V GS=0 to 10V V(plateau) V DD=24V, ID=40A V IS TC=25C - 0.9 50 61 80 320 1.2 62 76 A V ns nC Page 3 2003-01-20 SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 1 Power dissipation Ptot = f (TC) 200 SPP80N03S2L-04 2 Drain current ID = f (TC) parameter: V GS 10 V SPP80N03S2L-04 90 W A 160 140 120 100 70 60 50 40 P tot 80 30 60 40 20 0 0 100 120 140 160 C 190 20 10 0 0 20 40 60 80 ID 20 40 60 80 100 120 140 160 C 190 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC = 25 C 10 3 SPP80N03S2L-04 4 Max. transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 1 SPP80N03S2L-04 K/W D A = V DS DS (on ) /I tp = 30.0s 10 0 ID R 10 2 100 s ZthJC 10 -1 10 -2 1 ms D = 0.50 0.20 10 1 10 ms 10 -3 0.10 0.05 DC 10 -4 single pulse 0.02 0.01 10 0 -1 10 10 0 10 1 V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-01-20 SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 5 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 80 s 190 SPP80N03S2L-04 Ptot = 188W 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: V GS SPP80N03S2L-04 14 A 160 140 j i h VGS [V] a 2.5 b c d 2.8 3.0 3.3 3.5 3.8 4.0 4.3 4.5 10.0 12 11 e f g RDS(on) 10 9 8 7 6 5 4 j h i ID 120 100 80 60 40 20 0 0 g e f g f h i j e d 3 2 VGS [V] = e f 3.5 3.8 g 4.0 h i j 4.3 4.5 10.0 c b a 1 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 20 40 60 80 100 A 140 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 160 8 Typ. forward transconductance g fs = f(ID); Tj=25C parameter: gfs 35 A S 120 25 100 gfs 20 15 10 5 0.5 1 1.5 2 2.5 3 3.5 ID 80 60 40 20 0 0 V 4.5 VGS 0 0 20 40 60 80 100 120 140 160 A 200 ID Page 5 2003-01-20 SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V 10 SPP80N03S2L-04 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS 2.5 8 V V GS(th) 650A RDS(on) 7 6 5 4 3 2 1 0 -60 C 1.5 98% 130A typ 1 0.5 -20 20 60 100 140 200 0 -60 -20 20 60 100 C 180 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 s 10 3 SPP80N03S2L-04 A pF Ciss 10 2 Coss 10 3 C Crss IF 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 0 0 10 2 0 5 10 15 20 V 30 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2003-01-20 SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 80 A , VDD = 25 V, RGS = 25 400 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 80 A pulsed SPP80N03S2L-04 16 mJ V 300 12 E AS 250 VGS 10 0,2 VDS max 0,8 VDS max 200 8 150 6 100 4 50 2 0 25 45 65 85 105 125 145 C 185 Tj 0 0 20 40 60 80 nC 120 Q Gate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA SPP80N03S2L-04 36 V V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Page 7 2003-01-20 SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N03S2L-04, BSPB80N03S2L-04 and BSPI80N03S2L-04, for simplicity the device is referred to by the term SPP80N03S2L-04, SPB80N03S2L-04 and SPI80N03S2L-04 throughout this documentation Page 8 2003-01-20 |
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